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1

V-shaped defects connected to inversion domains in AlGaN layers

Pécz, B., Makkai, Zs., di Forte-Poisson, M. A., Huet, F., Dunin-Borkowski, R. E.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 681 KB

english, 2001

2

Isolated SiC nanocrystals in SiO[sub 2]

Makkai, Zs., PeÌcz, B., BaÌrsony, I., Vida, Gy., PongraÌcz, A., Josepovits, K. V., DeaÌk, P.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 649 KB

english, 2005

3

Characterization of GaAlN/GaN Superlattice Heterostructures

Makkai, Zs., Pécz, Béla, di Forte-Poisson, M.A., Huet, F.

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 485 KB

2001

4

Formation of epitaxial SiC nanocrystals

B. Pécz, Zs. Makkai, A. Pongrácz, I. Bársony, P. Deák, K.V. Josepovits

Journal:

Surface Science

Year:

2007

Language:

english

File:

PDF, 748 KB

english, 2007

5

Transmission electron microscopy of GaN layers grown by ELO and micro – ELO techniques

B. Pécz, Zs. Makkai, E. Frayssinet, B. Beaumont, P. Gibart

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 289 KB

english, 2005

6

Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Frayssinet, E., Beaumont, B., Faurie, J. P., Gibart, Pierre, Makkai, Zs., Pécz, B., Lefebvre, P., Valvin, P.

Journal:

MRS Internet Journal of Nitride Semiconductor Research

Year:

2002

Language:

english

File:

PDF, 576 KB

english, 2002

7

Nucleation of SiC nanocrystals at the Si/SiO 2 interface: Effect of the interface properties

Pongrácz, A., Battistig, G., Tóth, A. L., Makkai, Zs., Dücső, Cs., Josepovits, K. V., Bársony, I.

Journal:

Journal de Physique IV (Proceedings) /Le Journal de Physique IV

Year:

2006

Language:

english

File:

PDF, 198 KB

english, 2006

8

TEM investigation of defect structure in GaAlN/GaN heterostructures

Zs. Makkai, B. Pécz, M.A. di Forte-Poisson

Journal:

Year:

2003

Language:

english

File:

PDF, 577 KB

english, 2003

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